Radiation tolerant, thin, passive CMOS sensors read out with the RD53A chip

نویسندگان

چکیده

The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. process lines are especially interest for large-scale silicon detectors as they offer high production throughput at comparatively low cost. Moreover, several features like poly-silicon resistors, MIM-capacitors and metal layers available which can help enhance the sensor design. performance a 100 $\mathrm{\mu}$m thin with pitch 50 different irradiation levels, 5 $\times$ 10$^{15}$n$_{\mathrm{eq}}$cm$^{-2}$ 1 10$^{16}$n$_{\mathrm{eq}}$cm$^{-2}$, presented. was bump-bonded read out using RD53A readout chip. After highest fluence hit-detection efficiency larger than 99% measured minimum ionising particles. equivalent noise charge comparable to conventional planar sensors. Passive thus an attractive option operating harsh environments upgrades LHC experiments.

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ژورنال

عنوان ژورنال: Nuclear Instruments and Methods in Physics Research

سال: 2021

ISSN: ['1872-9576', '0168-9002']

DOI: https://doi.org/10.1016/j.nima.2021.165771